US Patent Issued to UNITED MICROELECTRONICS on March 25 for "High electron mobility transistor and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,052, issued on March 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and fabricating method of the same" was invented by Ming-Hua Chang (Tainan, Taiwan), Kun-Yuan Liao (Hsinchu, Taiwan), Lung-En Kuo (Tainan, Taiwan) and Chih-Tung Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. ...