ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,245, issued on March 18, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Manufacturing method of semiconductor device" was invented by Po-Yu Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing method of a semiconductor device includes the following steps. A first transistor is formed on a substrate. The first transistor includes a first semiconductor channel structure and two first source/drain structures. The first semiconductor channel structure includes first horizontal portions and a first vertical portion. The first horizontal portions are stacked in a vertical direction and separated from on...