US Patent Issued to UNITED MICROELECTRONICS on March 18 for "Magnetoresistive random access memory and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,556, issued on March 18, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory and method for fabricating the same" was invented by Hung-Chan Lin (Tainan, Taiwan) and Yu-Ping Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spin orbit torque (SOT) layer on the MTJ, a passivation layer around the MTJ, and a second SOT layer on the first SOT layer and the passivation layer. Preferably, a top surface of the passivation layer is lower than a top surface of the first SOT layer."

The patent wa...