US Patent Issued to UNITED MICROELECTRONICS on March 11 for "Power device and fabrication method thereof" (Taiwanese, Singaporean Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,647, issued on March 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Power device and fabrication method thereof" was invented by Chih-Chien Chang (Hsinchu, Taiwan), Shen-De Wang (Hsinchu County, Taiwan), Cheng-Hua Yang (Hsinchu, Taiwan), Linggang Fang (Singapore), Jianjun Yang (Singapore) and Wei Ta (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power device includes a substrate, an ion well in the substrate, a body region in the ion well, a source doped region in the body region, a drain doped region in the ion well, and gates on the substrate between the source doped region and the drain doped region. The gate...