US Patent Issued to United Microelectronics on June 3 for "Semiconductor device and manufacturing method thereof" (Singaporean, Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,168, issued on June 3, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Purakh Raj Verma (Singapore), Ching-Yang Wen (Singapore), Chee-Hau Ng (Singapore) and Chin-Wei Ho (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a high-Q capacitor, an ultra high density capacitor, and an interconnection. At least one trench is formed in the substrate. The high-Q capacitor is disposed on a surface of the substrate, and includes a bottom electrode, an upper electrode located on the bottom electrode, and a first dielec...