US Patent Issued to UNITED MICROELECTRONICS on June 3 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 4 -- United States Patent no. 12,324,181, issued on June 3, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Po-Wen Su (Kaohsiung, Taiwan), Ming-Hua Chang (Tainan, Taiwan) and Shui-Yen Lu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a patterned mask on the buffer layer, using the patterned mask to remove the buffer layer for forming ridges and a damaged layer on the ridges; removing the damaged layer, forming a barrier layer on the ...