ALEXANDRIA, Va., June 25 -- United States Patent no. 12,340,830, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Spin-orbit torque magnetic random access memory circuit and layout thereof" was invented by Chun-Yen Tseng (Tainan, Taiwan), Yu-Tse Kuo (Tainan, Taiwan), Shu-Ru Wang (Taichung, Taiwan), Jen-Yu Wang (Tainan, Taiwan), Li-Ping Huang (Miaoli County, Taiwan), Yi-Ting Wu (Tainan, Taiwan), Jia-Rong Wu (Kaohsiung, Taiwan) and Chun-Hsien Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention provides a spin-orbit torque magnetic random access memory (SOT-MRAM) circuit, including a read transistor pair with two read transistors in par...