US Patent Issued to UNITED MICROELECTRONICS on June 24 for "Semiconductor device and fabricating method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,567, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and fabricating method thereof" was invented by Po-Yu Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor channel layer, a semiconductor barrier layer, a gate capping layer, a dielectric layer, and a gate electrode. The semiconductor channel layer is disposed on the substrate, and the semiconductor barrier layer is disposed on the semiconductor channel layer. The gate capping layer is disposed on the semiconductor barrier layer, and the dielectric layer conformal...