US Patent Issued to UNITED MICROELECTRONICS on June 24 for "Resistive random-access memory device and forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,737, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Resistive random-access memory device and forming method thereof" was invented by Wen-Jen Wang (Tainan, Taiwan), Chun-Hung Cheng (Kaohsiung, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A RRAM device includes a bottom electrode, a resistive material layer, atop electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the t...