US Patent Issued to UNITED MICROELECTRONICS on June 24 for "Manufacturing method of high voltage semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,592, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Manufacturing method of high voltage semiconductor device" was invented by Hsin-Han Wu (Hsinchu, Taiwan), Kai-Kuen Chang (Hsinchu, Taiwan) and Ping-Hung Chiang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high voltage semiconductor device includes a semiconductor substrate, a first drift region, a gate structure, a first sub gate structure, a first spacer structure, a second spacer structure, and a first insulation structure. The first drift region is disposed in the semiconductor substrate. The gate structure is disposed on the semiconduct...