US Patent Issued to UNITED MICROELECTRONICS on June 24 for "High electron mobility transistor and method for forming the same using the metal gate layer and spacer as an etch mask" (Taiwanese Inventor)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,562, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for forming the same using the metal gate layer and spacer as an etch mask" was invented by Po-Yu Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a high electron mobility transistor includes the steps of providing a substrate, sequentially forming a buffer layer, a channel layer, a barrier layer, and a semiconductor gate layer on the substrate, forming a metal gate layer on the semiconductor gate layer, forming an insulating layer on the barrier layer, the semiconductor gate...