US Patent Issued to UNITED MICROELECTRONICS on June 24 for "High-electron mobility transistor and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,561, issued on June 24, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High-electron mobility transistor and fabrication method thereof" was invented by Chih-Tung Yeh (Taoyuan, Taiwan) and Wen-Jung Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high-electron mobility transistor includes a substrate, a buffer layer over the substrate, a barrier layer over the buffer layer, and a gate structure on the barrier layer. The gate structure includes a cap layer and a gate over the cap layer. The cap layer includes a gate-leakage suppressing region on its sidewall."

The patent was filed on July 29, 2022, under App...