ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,209, issued on June 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chung-Fu Chang (Tainan, Taiwan), Kuan-Hung Chen (Taichung, Taiwan), Guang-Yu Lo (New Taipei, Taiwan), Chun-Chia Chen (Tainan, Taiwan) and Chun-Tsen Lu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ion...