ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,253, issued on June 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chun-Hsien Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of: forming a fin-shaped structure on a substrate, forming a gate material layer on the fin-shaped structure, performing an etching process to pattern the gate material layer for forming a gate structure and a silicon residue, performing an ashing process on the silicon residue, and then performing a cleaning process to transform the silicon res...