US Patent Issued to UNITED MICROELECTRONICS on June 17 for "Middle voltage transistor and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,208, issued on June 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Middle voltage transistor and fabricating method of the same" was invented by Wei-Hsuan Chang (Tainan, Taiwan), Hao-Ping Yan (Tainan, Taiwan), Ming-Hua Tsai (Tainan, Taiwan) and Chin-Chia Kuo (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fabricating method of a middle voltage transistor includes providing a substrate. A gate predetermined region is defined on the substrate. Next, a mask layer is formed to cover only part of the gate predetermined region. Then, a first ion implantation process is performed to implant dopants into the substrat...