US Patent Issued to UNITED MICROELECTRONICS on June 17 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,336,245, issued on June 17, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Yen-Tsai Yi (Tainan, Taiwan), Wei-Chuan Tsai (Changhua County, Taiwan), Jin-Yan Chiou (Tainan, Taiwan) and Hsiang-Wen Ke (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a titanium nitride (TiN) layer on the p-type semicond...