ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,922, issued on June 10, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Semiconductor device and method for fabricating the same" was invented by Chih-Kai Hsu (Tainan, Taiwan), Ssu-I Fu (Kaohsiung, Taiwan), Yu-Hsiang Hung (Tainan, Taiwan), Wei-Chi Cheng (Kaohsiung, Taiwan) and Jyh-Shyang Jenq (Pingtung County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a gate structure on a substrate, a spacer around the gate structure, and a buffer layer adjacent to the gate structure. Preferably, the buffer layer includes a crescent moon shape and the buffer layer includes an inner curve, an outer curve...