US Patent Issued to United Microelectronics on June 10 for "Resistive memory structure comprising variable resistance and hard mask layers" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,046, issued on June 10, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Resistive memory structure comprising variable resistance and hard mask layers" was invented by Wen-Jen Wang (Tainan, Taiwan), Chun-Hung Cheng (Kaohsiung, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a resistive memory structure and a manufacturing method thereof. The resistive memory structure includes a substrate, a dielectric layer, a resistive memory device, a hard mask layer, and a spacer. The dielectric layer is located on the substrate. The dielectric layer has an opening. The resistive memor...