ALEXANDRIA, Va., June 18 -- United States Patent no. 12,329,037, issued on June 10, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Method for fabricating semiconductor device" was invented by Tai-Cheng Hou (Tainan, Taiwan), Chau-Chung Hou (Tainan, Taiwan), Da-Jun Lin (Kaohsiung, Taiwan), Wei-Xin Gao (Tainan, Taiwan), Fu-Yu Tsai (Tainan, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming a magnetic tunneling junction (MTJ) on a substrate, forming a first inter-metal dielectric (IMD) layer on the MTJ, removing part of the first IMD layer to form a damaged layer on th...