US Patent Issued to UNITED MICROELECTRONICS on June 10 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,889, issued on June 10, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Chun-Ming Chang (Kaohsiung, Taiwan), Che-Hung Huang (Hsinchu, Taiwan), Wen-Jung Liao (Hsinchu, Taiwan), Chun-Liang Hou (Hsinchu County, Taiwan) and Chih-Tung Yeh (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first...