US Patent Issued to UNITED MICROELECTRONICS on July 8 for "Static random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,599, issued on July 8, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Static random access memory" was invented by Chih-Kai Hsu (Tainan, Taiwan) and Chien-Hung Chen (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A static random access memory (SRAM) includes a substrate having a first active region and a second active region adjacent to the first active region. A first gate structure is disposed on the substrate and across the first active region and the second active region. A second gate structure is adjacent to a first side of the first gate structure. A first lower contact structure is disposed on the first acti...