US Patent Issued to UNITED MICROELECTRONICS on July 29 for "Semiconductor structure and the forming method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,323, issued on July 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor structure and the forming method thereof" was invented by Chih-Wei Chang (Tainan, Taiwan), Da-Jun Lin (Kaohsiung, Taiwan), Yao-Hsien Chung (Kaohsiung, Taiwan), Shih-Wei Su (Tainan, Taiwan), Hao-Hsuan Chang (Kaohsiung, Taiwan), Ting-An Chien (Tainan, Taiwan) and Bin-Siang Tsai (Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The invention provides a semiconductor structure, which comprises a GaN gallium nitride (GaN) layer, an aluminum gallium nitride (AlGaN) layer on the gallium nitride layer, a polarization boost layer on ...