US Patent Issued to UNITED MICROELECTRONICS on July 29 for "Resistive memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,505, issued on July 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan).

"Resistive memory device and method for manufacturing the same" was invented by Shu-Hung Yu (Kaohsiung, Taiwan), Chun-Hung Cheng (Kaohsiung, Taiwan) and Chuan-Fu Wang (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A resistive memory device is provided. The resistive memory device includes a first electrode, a memory structure on the first electrode, and a second electrode on the memory structure. The memory structure includes a tubular element and a pillar element. The tubular element includes oxide. The pillar element includes oxide. The ...