ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,320, issued on July 29, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"High electron mobility transistor structure and method of fabricating the same" was invented by Chih-Tung Yeh (Taoyuan, Taiwan) and Ming-Chang Lu (Changhua County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A high electron mobility transistor includes a substrate. A first III-V compound layer is disposed on the substrate. A second III-V compound layer is embedded within the first III-V compound layer. A P-type gallium nitride gate is embedded within the second Ill-V compound layer. A gate electrode is disposed on the second III-V compound layer and ...