ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,496, issued on July 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Wei Chen (Tainan, Taiwan) and Hui-Lin Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a synthetic antiferromagnetic (SAF) layer on a substrate, a barrier layer on the SAF layer, and a free layer on the barrier layer. Preferably, the SAF layer further includes a first pinned layer, a first spacer on the first pinned layer, a second pinned layer on the first spacer, a second spacer on the second pinned layer, and a reference layer on the ...