US Patent Issued to UNITED MICROELECTRONICS on July 22 for "Magnetoresistive random access memory device and method for fabricating the same" (Taiwanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,497, issued on July 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetoresistive random access memory device and method for fabricating the same" was invented by Hui-Lin Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetoresistive random access memory device includes a bottom electrode, a spin orbit torque (SOT) layer, a magnetic tunneling junction (MTJ) and a top electrode. The bottom electrode includes a first layer and a second layer connected with the first layer. A material of the first layer includes Tax1Ny1, a material of the second layer includes Tax2Ny2, and the following relationships ar...