US Patent Issued to UNITED MICROELECTRONICS on July 22 for "High electron mobility transistor and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,371, issued on July 22, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"High electron mobility transistor and method for fabricating the same" was invented by Chun-Liang Kuo (Kaohsiung, Taiwan), Yen-Hsing Chen (Taipei, Taiwan), Yen-Lun Chen (Miaoli County, Taiwan), Ruei-Hong Shen (Hsinchu, Taiwan), Tsung-Mu Yang (Tainan, Taiwan) and Yu-Ren Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier la...