ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,367, issued on July 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chih-Wei Kuo (Tainan, Taiwan), Tai-Cheng Hou (Tainan, Taiwan), Yu-Tsung Lai (Tainan, Taiwan) and Jiunn-Hsiung Liao (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first magnetic tunneling junction (MTJ) and a second MTJ on a substrate, a first top electrode on the first MTJ and a second top electrode on the second MTJ, a first spacer and a second spacer around the first MTJ, a third spacer and a fourth spacer around the second MTJ, a passiva...