US Patent Issued to UNITED MICROELECTRONICS on July 1 for "Layout pattern of magnetoresistive random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,369, issued on July 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Layout pattern of magnetoresistive random access memory" was invented by Chun-Yen Tseng (Tainan, Taiwan), Shu-Ru Wang (Taichung, Taiwan), Yu-Tse Kuo (Tainan, Taiwan), Chang-Hung Chen (Tainan, Taiwan), Yi-Ting Wu (Tainan, Taiwan), Shu-Wei Yeh (Tainan, Taiwan), Ya-Lan Chiou (Tainan, Taiwan) and Chun-Hsien Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending thro...