US Patent Issued to UNITED MICROELECTRONICS on July 1 for "Forming method of resistive random-access memory array" (Taiwanese Inventors)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,347,486, issued on July 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsinchu, Taiwan).

"Forming method of resistive random-access memory array" was invented by Chi-Hsiu Hsu (Hsinchu County, Taiwan), Yu-Huan Yeh (Hsinchu, Taiwan), Cheng-Hsiao Lai (Chiayi County, Taiwan), Guan-Lin Chen (New Taipei, Taiwan), Chuan-Fu Wang (Miaoli County, Taiwan) and Hung-Yu Fan Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A forming method of a ReRAM array includes steps as follows: Firstly, a first pulse is applied to a first ReRAM unit in the ReRAM array. Afterwards, a second pulse is applied to the first ReRAM unit, wherein the electrical pr...