US Patent Issued to UNITED MICROELECTRONICS on Jan. 28 for "Semiconductor device including gate oxide layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,915, issued on Jan. 28, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device including gate oxide layer" was invented by Ming-Hua Tsai (Tainan, Taiwan), Jung Han (New Taipei, Taiwan), Ming-Chi Li (Tainan, Taiwan), Chih-Mou Lin (Tainan, Taiwan), Yu-Hsiang Hung (Tainan, Taiwan), Yu-Hsiang Lin (Kaohsiung, Taiwan) and Tzu-Lang Shih (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate, a first gate oxide layer, and a first source/drain doped region. The first gate oxide layer is disposed on the semiconductor substrate, and the first gate oxide layer inc...