US Patent Issued to UNITED MICROELECTRONICS on Jan. 28 for "Method of removing step height on gate structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,699, issued on Jan. 28, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method of removing step height on gate structure" was invented by Yeh-Sheng Lin (Tainan, Taiwan), Chang-Mao Wang (Tainan, Taiwan), Chun-Chi Yu (Taipei, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of removing a step height on a gate structure includes providing a substrate. A gate structure is disposed on the substrate. A dielectric layer covers the gate structure and the substrate. Then, a composite material layer is formed to cover the dielectric layer. Later, part of the composite material layer is remove...