US Patent Issued to UNITED MICROELECTRONICS on Jan. 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,540, issued on Jan. 27, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Fu-Yu Tsai (Tainan, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a III-V compound semiconductor layer, a silicon-doped III-V compound barrier layer, and a silicon-rich tensile stress layer. The silicon-doped III-V compound barrier layer is disposed on the III-V compound semiconductor layer, and the silicon-rich tensile stress layer is disposed...