ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,734, issued on Jan. 20, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Semiconductor device and method of fabricating the same" was invented by Ching-Pin Hsu (Tainan, Taiwan), Shih Hung Yang (Tainan, Taiwan), Chu Chun Chang (Kaohsiung, Taiwan), Kuo-Yuh Yang (Hsinchu County, Taiwan) and Chia-Huei Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a conductive structure, a first dielectric layer, a second dielectric layer and a liner layer. The conductive structure is located on a substrate. The first dielectric layer covers the conductive structure and the substrate. The second diele...