US Patent Issued to UNITED MICROELECTRONICS on Jan. 20 for "MIM capacitor and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,485, issued on Jan. 20, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"MIM capacitor and fabricating method of the same" was invented by Da-Jun Lin (Kaohsiung, Taiwan), Bin-Siang Tsai (Changhua County, Taiwan), Fu-Yu Tsai (Tainan, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal-insulator-metal capacitor includes a bottom electrode, a dielectric layer, a superlattice layer, a silicon dioxide layer and a top electrode stacked from bottom to top. The superlattice layer contacts the dielectric layer. A silicon dioxide layer has a negative voltage coefficient of capacitance."

The paten...