US Patent Issued to UNITED MICROELECTRONICS on Jan. 13 for "Transistor with fin structure and nanosheet and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,049, issued on Jan. 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Transistor with fin structure and nanosheet and fabricating method of the same" was invented by Ching-In Wu (Taipei, Taiwan), Yu-Ming Lin (Tainan, Taiwan) and Cheng-Tung Huang (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor with a fin structure and a nanosheet includes a fin structure. A first gate portion is disposed on the fin structure. A first source/drain layer is disposed at one side of the first gate portion. A first source/drain layer is on the fin structure and extends into the fin structure. A second source/drain layer ...