US Patent Issued to UNITED MICROELECTRONICS on Jan. 13 for "Semiconductor memory device and fabrication method thereof" (Singaporean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,036, issued on Jan. 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor memory device and fabrication method thereof" was invented by Liang Yi (Singapore) and Chi Ren (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, an active region defined in the substrate by a trench isolation structure, a pair of floating gates on the substrate and at two sides of a fish-bone shaped recessed region of the active region, a source line doped region in the fish-bone shaped recessed region of the active region, wherein a bottom surface of the source line doped region extends...