US Patent Issued to UNITED MICROELECTRONICS on Jan. 13 for "Semiconductor device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,040, issued on Jan. 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chun-Yu Chen (Taichung, Taiwan), Bo-Lin Huang (Taichung, Taiwan), Jhong-Yi Huang (Nantou County, Taiwan), Keng-Jen Lin (Kaohsiung, Taiwan) and Yu-Shu Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming recesses adjacent to two sides of the gate structure, forming a buffer layer in the recesses, forming a first linear bulk layer on the buffer layer, forming...