ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,596, issued on Jan. 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Shih-Hung Tsai (Tainan, Taiwan), Chien-Ting Lin (Tainan, Taiwan), Yu-Hsiang Lin (New Taipei, Taiwan), Ssu-I Fu (Kaohsiung, Taiwan) and Chih-Kai Hsu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of first providing a first substrate having a high-voltage (HV) region and a medium voltage (MV) region and a second substrate having a low-voltage (LV) region and a static random access memory (SRAM) region, in whic...