US Patent Issued to United Microelectronics on Jan. 13 for "Method of manufacturing semiconductor structure including removing hard mask layer and dielectric material layer exposed by patterned photoresist layer" (Singaporean Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,460, issued on Jan. 13, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan).

"Method of manufacturing semiconductor structure including removing hard mask layer and dielectric material layer exposed by patterned photoresist layer" was invented by Wen Wen Gong (Singapore), Xiaofei Han (Singapore), Chow Yee Lim (Singapore), Hong Liao (Singapore) and Jun Qian (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor structure including the following steps is provided. A substrate is provided. The substrate has a first region and a second region. A stacked structure is formed on the substrate in the ...