US Patent Issued to UNITED MICROELECTRONICS on Jan. 13 for "Integrated high, medium, and low voltage semiconductor devices and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,080, issued on Jan. 13, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Integrated high, medium, and low voltage semiconductor devices and method for fabricating the same" was invented by Chih-Kai Hsu (Tainan, Taiwan), Yu-Hsiang Lin (New Taipei, Taiwan), Zen-Jay Tsai (Tainan, Taiwan) and Chun-Hsien Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes providing a substrate having a first region and a second region, forming a first gate dielectric layer on the first region, forming a second gate dielectric layer on the second region, and forming a first gate stru...