ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,398, issued on Feb. 25, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Chia-Ming Kuo (Kaohsiung, Taiwan), Po-Jen Chuang (Kaohsiung, Taiwan), Yu-Ren Wang (Tainan, Taiwan), Ying-Wei Yen (Miaoli County, Taiwan), Fu-Jung Chuang (Kaohsiung, Taiwan), Ya-Yin Hsiao (Taipei, Taiwan) and Nan-Yuan Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silico...