US Patent Issued to UNITED MICROELECTRONICS on Feb. 11 for "SONOS memory cell structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,225,729, issued on Feb. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"SONOS memory cell structure and fabricating method of the same" was invented by Yung-Ting Chen (Hsinchu County, Taiwan) and Hsueh-Chun Hsiao (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An SONOS memory cell includes a silicon substrate. A tunnel silicon oxide layer, a silicon nitride layer and a silicon oxide layer are disposed from bottom to top on the silicon substrate. The silicon oxide layer includes two first silicon oxide layers and a second silicon oxide layer. A thickness of the silicon oxide layer is smaller than a thickness ...