US Patent Issued to UNITED MICROELECTRONICS on Feb. 11 for "Semiconductor device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,335, issued on Feb. 11, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and fabrication method thereof" was invented by Ching-Chung Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate of first conductivity type; a first heavily doped region and a second heavily doped region of second conductivity type spaced apart from the first heavily doped region, located in the substrate; a channel region in the substrate and between the first heavily doped region and the second heavily doped region; a gate disposed on the channel region; a hard mask layer coveri...