ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,514,131, issued on Dec. 30, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).
"Method for fabricating semiconductor device" was invented by Jia-Rong Wu (Kaohsiung, Taiwan), Rai-Min Huang (Taipei, Taiwan), Ya-Huei Tsai (Tainan, Taiwan), I-Fan Chang (Tainan, Taiwan) and Yu-Ping Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) stack on a substrate; forming a top electrode on the MTJ stack; performing a first patterning process to remove the MTJ stack along a first direction; and performing a second patterning ...