US Patent Issued to UNITED MICROELECTRONICS on Dec. 16 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,694, issued on Dec. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Shi-You Liu (Kaohsiung, Taiwan), Ming-Shiou Hsieh (Chiayi County, Taiwan), Zih-Hsuan Huang (Tainan, Taiwan), Tsai-Yu Wen (Tainan, Taiwan) and Yu-Ren Wang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate having a P-type device region and an N-type device region, wherein the P-type device region includes germanium dopants. A first gate oxide layer is formed on the P-type device region and a second gate oxide layer is formed on the N-typ...