ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,500,115, issued on Dec. 16, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Semiconductor device and method for fabricating the same" was invented by Wen-Kai Lin (Yilan County, Taiwan), Chi-Horn Pai (Tainan, Taiwan), Sheng-Yuan Hsueh (Tainan, Taiwan), Kuo-Hsing Lee (Hsinchu County, Taiwan) and Chih-Kai Kang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes the steps of first forming a shallow trench isolation (STI) in a substrate, forming a first gate structure on the substrate and adjacent to the STI, forming a first doped region between the first gate structure an...