US Patent Issued to UNITED MICROELECTRONICS on Aug. 26 for "Magnetic memory device and fabrication method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,538, issued on Aug. 26, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Magnetic memory device and fabrication method thereof" was invented by Hui-Lin Wang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory device includes a bottom electrode layer, a magnetic tunneling junction (MTJ) stack disposed on the bottom electrode layer, a capping layer disposed on the MTJ stack, and a top electrode layer disposed on the capping layer. The top electrode layer comprises RuO2."

The patent was filed on Sept. 6, 2022, under Application No. 17/903,998.

*For further information, including images, charts and tables...