US Patent Issued to UNITED MICROELECTRONICS on Aug. 19 for "Resistive random access memory structure and fabricating method of the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,380, issued on Aug. 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Resistive random access memory structure and fabricating method of the same" was invented by Po-Kai Hsu (Tainan, Taiwan) and Chung-Yi Chiu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An RRAM structure includes a substrate. A transistor is disposed on the substrate, wherein the transistor includes a gate structure, a source and a drain. An interlayer dielectric layer covers the transistor. A drain contact plug is disposed within the interlayer dielectric layer and contacts the drain, and wherein an end of the drain contact plug protrudes from...