US Patent Issued to UNITED MICROELECTRONICS on Aug. 19 for "Method for forming a semiconductor memory device" (Singaporean Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,377, issued on Aug. 19, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu, Taiwan).

"Method for forming a semiconductor memory device" was invented by Chia-Ching Hsu (Singapore).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a substrate, a first dielectric layer on the substrate, a bottom electrode on the first dielectric layer, a second dielectric layer on the first dielectric layer, and a top electrode in the second dielectric layer. The top electrode has a lower portion around the bottom electrode and a tapered upper portion. A third dielectric layer is disposed above the bottom electrode and around the...